器件名称:
V12P12
功能描述:
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
文件大小:
109.94KB 共5页
简 介:
New Product V12P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 6 A FEATURES TMBS K eSMP TM Series Very low profile - typical height of 1.1 mm Ideal for automated placement Trench MOS Schottky technology 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Halogen-free 12 A 120 V 150 A PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 12 A TJ max. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test 100 mJ 0.63 V 150 °C TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, TJ = 25 °C Operating junction and storage temp……
