器件名称:
1N914B
功能描述:
500mW 100 Volt Silicon Epitaxial Diodes
文件大小:
86.34KB 共3页
简 介:
MCC )HDWXUHV omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N914(A)(B) Low Current Leakage Compression Bond Construction Low Cost 500mW 100 Volt Silicon Epitaxial Diodes DO-35 0D[LPXP5DWLQJV Operating Temperature: -55OC to +150 OC Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/W Junction To Ambient Electrical Characteristics @ 25OC Unless Otherwise Specified Maximum Repetitive Reverse Voltage Average Rectified Forward Current Power Dissipation Junction Temperature Peak Forward Surge Current VRRM IO PD TJ IFSM 100V 200mA 500mW 150OC 1.0A 4.0A 100V 75V A D Minimum Breakdown Voltage Maximum Instantaneous Forward Voltage 1N914 1N914 A 1N914 B 1N914 B Maximum Reverse Current Typical Junction Capacitance Reverse Recovery Time VR Pulse Width=1.0 second Pulse Width=1.0 microsecond IR=100uA, IR=5.0uA O Cathode Mark B D C VF 1.0V IR CJ Trr 720mV 25nA 5.0uA 50uA 4.0pF 4.0nS TJ = 25 C IFM = 10mA; IFM = 20mA; IFM = 100mA; IFM = 5.0mA; VR=20V, TJ=25OC, O VR=75V, TJ=25 C, VR=20V, TJ=150 OC Measured at 1.0MHz, VR=0V IF=10mA VR = 6V RL=100 , Irr=1.0mA DIMENSIONS INCHES MIN ------1.000 MM MIN ------25.40 DIM A B C D MAX .166 .079 .020 --- MAX 4.2 2.00 .52 --- NOTE *Pulse test: Pulse width 300 usec, Duty cycle 2% www.mccsemi.com 1N914(A)(B) Figure 1 Typical Forward Characteristics 20 1N914B 1N914A 10 6 1N914 4 2 MilliAmps 1 .6 .4 .2 25OC .1 .06 .04 .02 .01 .4 .6 .8 1.0 1.2 1.4 0 100 400 300 MilliWatts 200 500 600 MCC Figur……
