器件名称:
STP100NF04L
功能描述:
N-CHANNEL 40V - 0.0036 ohm - 100A TO-220 STripFET
文件大小:
268.03KB 共8页
简 介:
N-CHANNEL 40V - 0.0036 - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L s s s s STP100NF04L VDSS 40 V RDS(on) <0.0042 ID 100 A TYPICAL RDS(on) = 0.0036 LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM() Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 40 40 ± 16 100 70 400 300 2 3.6 1.4 -65 to 175 175 (1) ISD ≤100A, di/dt ≤240A/s, VDD ≤ 32V, T j ≤ T JMAX (2) Starting T j = 25 oC, IAR = 50A, V DD= 30V Unit V V V A A A W W/°C V/ns J °C °C EAS (2) Tstg Tj () Pulse width limited by safe operating area. (*) Current Limited by package February 2002 . 1/8 S……