器件名称:
STP12NM50N
功能描述:
N-channel 500V - 0.29
文件大小:
510.43KB 共18页
简 介:
STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N N-channel 500V - 0.29 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh Power MOSFET General features Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.38 <0.38 <0.38 <0.38 ID 11A 11A 11A (1) 11A 3 1 1 3 2 3 1 DPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel DPAK 3 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications ■ Switching application Order codes Part number STB12NM50N STD12NM50N STF12NM50N STP12NM50N Marking B12NM50N D12NM50N F12NM50N P12NM50N Package DPAK DPAK TO-220FP TO-220 Packaging Tape & reel Tape & reel Tube Tube November 2006 Rev 7 1/18 www.st.com 18 Contents STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit .....................................……