器件名称:
STP12NM60N
功能描述:
N-channel 600V - 0.35
文件大小:
591.63KB 共18页
简 介:
STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41 < 0.41 < 0.41 < 0.41 < 0.41 ID 1 3 3 12 10A 10A 10A(1) 10A 10A DPAK IPAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram Description This series of devices implements second generation MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Application ■ Switching application Order codes Part number STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N Marking B12NM60N B12NM60N F12NM60N P12NM60N W12NM60N Package DPAK IPAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube April 2007 Rev 2 1/18 www.st.com 18 Contents STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (cu……
