器件名称:
STP140NF55
功能描述:
N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET
文件大小:
280.72KB 共11页
简 介:
N-CHANNEL 55V - 0.0065 - 80A TO-220/DPAK STripFET II POWER MOSFET Table 1: General Features TYPE STB140NF55 STP140NF55 ■ STB140NF55 STP140NF55 Figure 1:Package RDS(on) ID 80 A 80 A VDSS 55 V 55 V < 0.008 < 0.008 TYPICAL RDS(on) = 0.0065 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL ■ HIGH CURRENT, SWITCHING APPLICATIONS ■ AUTOMOTIVE ENVIRONMENT ■ 3 1 3 1 2 D2PAK TO-263 (Suffix “T4”) TO-220 Figure 2: Internal Schematic Diagram Table 2: Order Codes Part Number STB140NF55T4 STP140NF55 MARKING B140NF55 P140NF55 PACKAGE DPAK TO-220 PACKAGING TAPE & REEL TUBE Table 3:ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID ID IDM() Ptot dv/dt(1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 55 ± 20 80 80 320 300 2 10 1.3 -55 to 175 (1) ISD ≤80A, di/dt ≤300A/s, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 40A, VDD = 30V Unit V V A A A W W/°C V/ns mJ °C () Pulse w……
