器件名称: STP16NM50N
功能描述: N-channel 500 V - 0.21
文件大小: 554.68KB 共18页
简 介:STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N
N-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
Features
Type STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 0.26 0.26 0.26 0.26 ID
1 3
3 12
15 A 15 A 15 A (1)
DPAK
2 1 3
IPAK
15 A 15 A
3 1 2
TO-247
3 1 2
1. Limited only by maximum temperature allowed ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220
TO-220FP
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices is designed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking B16NM50N I16NM50N F16NM50N P16NM50N W16NM50N Package DPAK IPAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube
Order codes STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N
March 2008
Rev 2
1/18
www.st.com 18
Contents
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ……
