器件名称:
STP180N10F3
功能描述:
N-channel 100 V, 4.0 m
文件大小:
256.14KB 共12页
简 介:
STB180N10F3 STP180N10F3 N-channel 100 V, 4.0 m, 120 A STripFET Power MOSFET D2PAK, TO-220 Preliminary Data Features Type STB180N10F3 STP180N10F3 VDSS 100 V 100 V RDS(on) 4.5 m 4.8 m ID 120 A(1) 120 A(1) 3 1 2 3 1 1. Value limited by wire bonding ■ ■ Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Application ■ High current switching applications Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Table 1. Device summary Marking 180N10F3 180N10F3 Package D2PAK TO-220 Packaging Tape and reel Tube Order codes STB180N10F3 STP180N10F3 August 2008 Rev 1 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STB180N10F3 - STP180N10F3 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . .……
