器件名称: STP185N10F3
功能描述: N-channel 100 V, 4.0 m
文件大小: 255.91KB 共12页
简 介:STB185N10F3 STP185N10F3
N-channel 100 V, 4.0 m, 120 A, D2PAK, TO-220 STripFET Power MOSFET
Preliminary Data
Features
Type STB185N10F3 STP185N10F3 VDSS 100 V 100 V RDS(on) 4.5 m 4.8 m ID 120 A(1) 120 A(1)
3 1 2
3 1
1. Value limited by wire bonding ■ ■
Ultra low on-resistance 100% avalanche tested
TO-220
D2PAK
Application
■
Switching application – Automotive Figure 1. Internal schematic diagram
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
Table 1.
Device summary
Marking 185N10F3 185N10F3 Package D2PAK TO-220 Packaging Tape and reel Tube
Order codes STB185N10F3 STP185N10F3
August 2008
Rev 1
1/12
www.st.com 12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
STB185N10F3 - STP185N10F3
Contents
1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6
Package mechanical data . . . . . . . . . . . . . . . .……