器件名称:
STP20NM50FD
功能描述:
N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh
文件大小:
276.77KB 共9页
简 介:
STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22 - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE STP20NM50FD STB20NM50FD-1 s s s s s s VDSS 500V 500V RDS(on) <0.25 <0.25 Rds(on)*Qg 8.36 *nC 8.36 *nC ID 20 A 20 A TYPICAL RDS(on) = 0.22 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS 3 1 2 12 3 TO-220 I2PAK (Tabless TO-220) DESCRIPTION The FDmesh associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters. INTERNAL SCHEMATIC DIAGRAM s APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE STP20NM50FD STB20NM50FD-1 MARKING P20NM50FD B20NM50FD-1 PACKAGE TO-220 I PAK 2 PACKAGING TUBE TUBE August 2003 1/9 STP20NM50FD/STB20NM50FD-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 20 14 80 192 1.2 20 –65 to 150 150 Unit V V V A A A W W/°C……
