器件名称:
VNH50N04
功能描述:
FULLY AUTOPROTECTED POWER MOSFET
文件大小:
94.54KB 共7页
简 介:
VNH50N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH50N04 s s s s s s V clamp 40 V R DS(on) 0.012 I lim 50 A s s s s LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-218 PACKAGE TO-218 DESCRIPTION The VNH50N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Buit-in thermal shut-down, linear BLOCK DIAGRAM current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. September 1994 1/7 VNH50N04 ABSOLUTE MAXIMUM RATING Symbol VD S V in ID IR V esd P tot Tj Tc T stg Parameter Drain-source Voltage (V in = 0) Input Voltage Drain Current Reverse DC Output Current Electrostatic Discharge (C= 100 pF, R=1.5 K ) Total Dissipation at Tc = 25 C Operating Junction Temperature Case Operating Temperature Storage Temperature o Value Internally Clamped 18 Internally Limited -50 2000 208 Internally Limited Internally Limited -55 to 150 Unit V V A A V W o o o C C C THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.6 30 o o C/W C/W ELECTRICAL CHARACT……
