器件名称:
1SS110
功能描述:
Silicon Epitaxial Planar Diode for Tuner Band Switch
文件大小:
16.99KB 共5页
简 介:
1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features Low forward resistance. (r f = 0.9 max) Suitable for 5mm pitch high speed automatical insertion. Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS110 Cathode band Verdure Package Code MHD Outline 1 Cathode band 2 1. Cathode 2. Anode 1SS110 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Value 35 100 175 –65 to +175 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse voltage Reverse current Capacitance Forward resistance Symbol VF VR IR C rf Min — 35 — — — Typ — — — — — Max 1.0 — 0.1 1.2 0.9 Unit V V A pF Test Condition I F = 10mA I R = 10A VR = 25V VR = 6V, f = 1MHz I F = 2mA, f = 100MHz 1SS110 10 –2 10 Forward current I F (A) –4 10–6 10 –8 10 –10 10 –12 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 10 f = 1MHz Capacitance C (pF) 1.0 10 –1 1.0 10 Reverse voltage VR (V) 40 Fig.2 Capacitance Vs. Reverse voltage 1SS110 10 2 f = 100MHz Forward resistance r f ( ) 10 1.0 10 –1 10 –2 10 –4 10–3 10–2 10 –1 Forward current I F (A) Fig.3 Forward resistance Vs. Forward current 1SS110 Package Dimensions Unit: mm 26.0 Min 2.4 Max 26.0 Min φ 2.0 Max φ 0.4 1 2 Cathode band (Verdure) 1 Cathode 2 Anode HITACHI Code JEDEC C……
