器件名称:
1SS118
功能描述:
Silicon Epitaxial Planar Diode for High Speed Switching
文件大小:
17.51KB 共5页
简 介:
1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 (Z) Rev. 0 Features High average forward current. (I O = 200mA) High reliability with glass seal. Ordering Information Type No. 1SS118 Cathode band Black Mark S118 Package Code DO-35 Outline 1 S1 18 2 Type No. Cathode band 1. Cathode 2. Anode 1SS118 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Value at duration of 1s Symbol VRM VR I FM I FSM * IO Pd Tj Tstg Value 75 50 600 4 200 500 175 –65 to +175 Unit V V mA A mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr Min — — — — Typ — — — — Max 1.0 0.1 3.5 3.0 Unit V A pF ns Test Condition I F = 10mA VR = 50V VR = 0V, f = 1MHz I F = 10mA, VR = 6V, Irr = 0.1IR , RL = 50 1SS118 10 –1 Forward current I F (A) 10 –2 10 –3 10 –4 0 0.2 Ta = 125 °C Ta = 75°C Ta = 25°C Ta = –25 ° C 0.8 0.4 0.6 1.0 Forward voltage VF (V) 1.2 Fig.1 Forward current Vs. Forward voltage –4 10 Reverse current I R (A) Ta = 125°C 10 –5 10 –6 Ta = 75°C 10 –7 0 30 10 20 40 Reverse voltage VR (V) 50 Fig.2 Reverse current Vs. Reverse voltage 1SS118 3.0 f = 1MHz 2.5 Capacitance C (pF) 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 Reverse voltage VR (V) Fig.3 Capacitance Vs. Re……
