器件名称:
1SS119
功能描述:
Silicon Epitaxial Planar Diode for High Speed Switching
文件大小:
146.09KB 共5页
简 介:
1SS119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0564-0300 (Previous: ADE-208-180B) Rev.3.00 Mar 23, 2005 Features Low capacitance. (C = 3.0 pF max) Short reverse recovery time. (trr = 3.5 ns max) Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS119 Cathode band Light Blue Package Name MHD Package Code (Previous Code) GRZZ0002ZC-A (MHD) Pin Arrangement 1 Cathode band 2 1. Cathode 2. Anode Rev.3.00 Mar 22, 2005 page 1 of 4 1SS119 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IO IFM IFSM * Pd Tj Tstg Value 35 30 150 450 1 250 175 65 to +175 Unit V V mA mA A mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C trr * Min — — — — Typ — — — — Max 0.8 0.1 3.0 3.5 Unit V A pF ns Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 Note: Reverse recovery time test circuit DC Supply 0.1 F Pulse Ro = 50 Generator Trigger 3 k Sampling Oscilloscope Rin = 50 Rev.3.00 Mar 23, 2005 page 2 of 4 1SS119 Main Characteristic 10–1 10–4 Ta = 125°C 10–5 10–2 Ta = 125 °C Ta = 75°C Ta = 25°C Ta = -25°C Reverse current IR (A) Forward current IF (A) 10–6 Ta = 75°……
