器件名称:
AP1608P1C_07
功能描述:
1.6X0.8mm PHOTOTRANSISTOR
文件大小:
154.98KB 共5页
简 介:
1.6X0.8mm PHOTOTRANSISTOR Part Number: AP1608P1C Features z 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. z MECHANICALLY AND SPECTRALLY MATCHED TO INFRARED EMITTING LED LAMP. z WATER CLEAR LENS. z PACKAGE: 2000PCS / REEL. z MOISTURE SENSITIVITY LEVEL : LEVEL 3. z RoHS COMPLIAN Description Made with NPN silicon phototransistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2.Tolerance is ±0.1(0.004") unless otherwise noted 3.Specifications are subject to change without notice. 4.The device has a single mounting surface. The device must be mounted according to the specifications. SPEC NO: DSAD1375 APPROVED: WYNEC REV NO: V.10 CHECKED: Allen Liu DATE: DEC/21/2007 DRAWN: S.P.Chen PAGE: 1 OF 5 ERP:1203000037 Electrical / Optical Characteristics at TA=25°C Symbol VBR CEO VBR ECO VCE (SAT) I CEO TR TF I (ON) 2θ1/2 Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10％ to 90％ ) Fall Time (90％ to 10％ ) On State Collector Current Viewing Angle 0.1 15 15 0.3 120 Min. 30 5 0.8 100 Typ. Max. Units V V V nA us us mA deg Test Conditions IC=100uA Ee=0mW/c ㎡ IE=100uA Ee=0mW/c ㎡ IC=2mA Ee=20mW/c ㎡ VCE=10V Ee=0mW/c ㎡ VCE = 5V IC=1mA RL=1000 VCE = 5V Ee=1mW/c ㎡ λ=940nm Absolute Maximum Ratings at TA=25°C Parameter Collector-to-Emitter Voltage Emitter-to-Collector Voltage Power Dissipation at (or below) 25°C Free Air Temperature Operating Temperature S……
