器件名称: 1SS190_07
功能描述: Ultra High Speed Switching Application
文件大小: 188.58KB 共3页
简 介:1SS190
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS190
Ultra High Speed Switching Application
z Small package z Low forward voltage z Small total capacitance : SC-59 : VF (3) = 0.92V (typ.) : CT = 2.2pF (typ.) Unit: mm
z Fast reverse recovery time : trr = 1.6ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 85 80 300 100 2 150 125 55~125 Unit V V mA mA A mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC EIAJ TOSHIBA Weight: 0.012g
TO-236MOD SC-59 1-3G1C
Electrical Characteristics
Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance Reverse recovery time IR (1) IR (2) CT trr Test Circuit ― ― ― ― ― ― ― Test Condition IF = 1mA IF = 10mA I……
