器件名称:
1SS199
功能描述:
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小:
17.08KB 共5页
简 介:
1SS199 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-299A (Z) Rev. 1 Features Detection efficiency is very good. Small temperature coefficient. Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS199 Cathode band Green Mark 3 Package Code MHD Outline 3 1 Cathode band 2 1. Cathode 2. Anode 1SS199 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol IF IR C η — Min 3.0 — — 70 70 Typ — — — — — Max — 100 3.0 — — Unit mA A pF % V Test Condition VF = 1V VR = 10V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k , CL = 20pF *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; I R ≥ 200A at VR = 10V 1SS199 10 –1 10 Forward current I F (A) –2 10 –3 10 –4 10 –5 0 0.8 1.2 1.6 0.4 Forward voltage VF (V) 2.0 Fig.1 Forward current Vs. Forward voltage –2 10 Reverse current I R (A) 10 –3 10 –4 10 –5 10 –6 0 5 10 15 25 20 Reverse voltage VR (V) 30 Fig.2 Reverse current Vs. Reverse voltage 1SS199 f = 1MHz 10 Capacitance C (pF) 1.0 10 –1 10–1 1.0 Reverse voltage VR (V) 10 Fig.3 Capacitance Vs. Reverse voltage 100 80 Rectifier efficiency η (%) 60 40 20 0 0 0.5 1.……
