器件名称:
1SS270
功能描述:
Silicon Epitaxial Planar Diode for High Speed Switching
文件大小:
75.58KB 共5页
简 介:
1SS270 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0566-0400 Rev.4.00 Sep 29, 2008 Features Low capacitance. (C = 3.0 pF max) Short reverse recovery time. (trr = 3.5 ns max) Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Part No. 1SS270 Cathode Band Light Blue Package Name MHD Package Code GRZZ0002ZC-A Pin Arrangement 1 Cathode band 2 1. Cathode 2. Anode REJ03G0566-0400 Rev.4.00 Sep 29, 2008 Page 1 of 4 1SS270 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IO IFM IFSM * Pd Tj Tstg Value 35 30 150 450 1 250 175 –65 to +175 Unit V V mA mA A mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C trr Min — — — — Typ — — — — Max 0.8 1.0 3.0 3.5 Unit V μA pF ns Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 Ω REJ03G0566-0400 Rev.4.00 Sep 29, 2008 Page 2 of 4 1SS270 Main Characteristic 10–1 10–4 10–5 10–2 Reverse current IR (A) Forward current IF (A) 10–6 10–7 10 –3 10–8 10–4 0 0.2 0.4 0.6 0.8 1.0 1.2 10–9 0 10 20 30 40 50 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Re……
