器件名称:
1SS286
功能描述:
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小:
27.4KB 共6页
简 介:
1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A (Z) Rev. 1 Sep. 1995 Features Very low reverse current. Detection efficiency is very good. Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD Outline 7 1 Cathode band 2 1. Cathode 2. Anode 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 25 35 150 100 –55 to +100 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capability Symbol VF VR IR C C VF — Min — 25 — — — — 10 Typ — — — — — — — Max 0.6 — 10 1.2 0.1 10 — Unit V V nA pF pF mV V Test Condition IF = 10mA IR = 10A VR= 10V VR = 0V, f = 1MHz VR = 0V, f = 1MHz IF = 10mA * C = 200pF, Both forward and reverse direction 1 pulse. 1 Notes: 1. Failure criterion; IR ≥ 20A 2. Each group shall unify a multiple of 4 diodes Rev.1, Sep. 1995, page 2 of 6 1SS286 10 –1 10–2 10 –3 Forward current I F (A) 10 –4 10 10 –5 –6 10 10 –7 –8 –9 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage –6 10 Reverse current I R (A) 10 –7 10 –8 10 –9 10 –10 0 5 10 20 15 Reverse voltage VR (V) 25 Fig.2 Reverse current Vs. Reverse voltage Rev.……
