器件名称:
1SS294_07
功能描述:
Low Voltage High Speed Switching
文件大小:
197.87KB 共3页
简 介:
1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching z Low forward voltage z Low reverse surrent z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Symbol VRM VR IFM IO P Tj Rating 45 40 300 100 150 125 Unit V V mA mA mW °C JEDEC TO236MOD EIAJ SC59 Storage temperature range Tstg 55~125 °C TOSHIBA 13G1B Weight: 0.012g Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance IR CT Test Circuit Test Condition IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0, f = 1MHz Min Typ. 0.28 0.36 0.54 ― 18 Max Unit ― ― ― ― ― ― ― ― ― ― ― ― 0.60 5 25 μA pF V Marking ……
