器件名称:
1SS311_07
功能描述:
High Voltage,High Speed Switching Applications
文件大小:
193.23KB 共3页
简 介:
1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage z High voltage z Small total capacitance z Small package : VF = 0.94V (typ.) : VR = 400V (min) : CT = 3.2pF (typ.) : SC59 Unit: mm z Fast reverse recovery time : trr = 1.5ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 420 400 300 100 2 150 125 55125 Unit V V mA mA A mW °C °C JEDEC ― EIAJ SC61 Note: Using continuously under heavy loads (e.g. the application of high 1 3G1B TOSHIBA temperature/current/voltage and the significant change in Weight: 0.012g temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Symbol VF (1) VF (2) Reverse current Total capacitance Reverse recovery time IR (1) IR (2) CT trr Test Circuit Test Condition IF = 10……
