器件名称:
1SS315_07
功能描述:
UHF Band Mixer Applications
文件大小:
207.27KB 共3页
简 介:
1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range Symbol VRM IF Tj Tstg Rating 5 30 125 55~125 Unit V mA °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1E1A Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Forward current Reverse current Total capacitance Symbol VF IF IR CT IF = 2 mA VF = 0.5 V VR = 0.5 V VR = 0.2 V, f = 1 MHz Test Condition Min 30 Typ. 0.25 0.6 Max 25 Unit V mA μA pF Marking 1 2007-11-01 1SS315 2 2007-11-01 1SS315 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 20070701-EN GENERAL TOSHIBA is continually working to improve the quality and reliability of its products.……
