器件名称:
2N3227
功能描述:
SILICON ANNULAR TRANSISTORS
文件大小:
116.81KB 共2页
简 介:
NPN 2N3227 SILICON ANNULAR TRANSISTORS The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed switching applications. They are mounted in Jedec TO-18 metal. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO VCES IC (peak) PD PD TJ TStg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Ratings Value 40 20 6 40 500 0.36 2.06 1.2 6.85 +200 -65 to +200 Unit V V V V mA Watts mW/°C Watts mW/°C °C Collector Current TOTAL Device Dissipation Ambient Temperature Derating Factore Above TOTAL Device Dissipation Case Temperature . Derating Factore Above Junction Temperature Storage Temperature range @ TC 25° @ TC 25° = = NPN 2N3227 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICEX IBL BVCBO BVEBO BVCEO BVCES Ratings Collector cut-off current Collector cut-off curren Base cut-off curren Collector-Base Breakdown voltage Emitter-Base Breakdown voltage Collector-Emitter Breakdown voltage (1) Collector-Emitter voltage Test Condition(s) IE = 0 ; VCB = 20V IE = 0 ; VCB = 20V ; TA = 150°C VCE = 20V ; VEB(off) = 3V VCE = 20V ; VEB(off) = 3V IC =10 A ; IB = 0 IE =10 A ; IC = 0 IC = 10 mA IC =10 A ; IB = 0 Min Typ 40 6 20 40 - Mx Unit 0.2 50 0.2 0.5 - A V V V V COMSET SEMICONDUCTORS 1/2 Symbol Ratings Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) DC Current Gain Small Signal Current Gain Storage time Turn-off time Turn-on time Output Capacitance Input Ca……
