器件名称:
V10150S
功能描述:
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
文件大小:
166.33KB 共5页
简 介:
New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A TMBS TO-220AB ITO-220AB FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TO-262AA K 2 V10150S PIN 1 3 1 VF10150S PIN 1 PIN 2 2 3 1 PIN 2 CASE PIN 3 PIN 3 TO-263AB K TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 2 3 A NC VB10150S NC A K HEATSINK PIN 1 VI10150S PIN 2 K MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 150 V 120 A 0.69 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated ……
