器件名称:
1SS382
功能描述:
Ultra High Speed Switching Application
文件大小:
186.77KB 共3页
简 介:
1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application z Small package z Composed of 2 independent diodes. z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 85 80 300 * 100 * 2 100 * 125 55~125 Unit V V mA mA A mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit rating. Total rating = unit rating × 1.5 JEDEC EIAJ TOSHIBA Weight: 0.006g ― ― 1-2U1A *: Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance Reverse recovery time IR (1) IR (2) CT trr Test Circuit ― ― ― ― ― ―……
