器件名称:
1SS384_07
功能描述:
Low Voltage High Speed Switching
文件大小:
200.61KB 共3页
简 介:
1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range Symbol VRM VR IFM IO IFSM P Tj Tstg Topr Rating 15 10 200 * 100 * 1* 100 * 125 55125 40100 Unit V V mA mA A mW °C °C °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high EIAJ ― temperature/current/voltage and the significant change in TOSHIBA 1-2U1A temperature, etc.) may cause this product to decrease in the Weight: 0.006g reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance IR CT Test Circuit ― ― ― ― ― Test Condition IF = 1mA IF = 5mA IF =……
