器件名称:
ACE3401
功能描述:
P-Channel Enhancement Mode MOSFET
文件大小:
185.82KB 共8页
简 介:
ACE3401 Technology Description The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. P-Channel Enhancement Mode MOSFET Features -30V/-4.0A, RDS(ON)=55mΩ@VGS=-10V -30V/-3.2A, RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2A, RDS(ON)=75mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RθJA -30 ±12 -40 -3.2 -15 -1.0 1.25 0.8 150 120 V V A A A W ℃ ℃/W Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 ℃ VER 1.2 1 ACE3401 Technology Packaging Type SOT-23-3 3 P-Channel Enhancement Mode MO……
