器件名称:
1N4148M
功能描述:
SILICON EPITAXIAL PLANAR DIODE
文件大小:
172.12KB 共2页
简 介:
1N4148M SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Peak Reverse Voltage Rectified Current (Average), Half Wave Rectification with Resist. Load at f ≥ 50 Hz Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range 1) Symbol VR VRM IO IFSM Ptot Tj TS Value 50 60 130 500 400 1) Unit V V mA mA mW O 200 - 65 to + 200 C C O Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Characteristics at Tj = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Leakage Current at VR = 50 V Reverse Breakdown Voltage tested with 100 A Pulses Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Symbol VF IR V(BR)R Ctot trr Min. 60 Max. 1.1 0.5 3 4 Unit V μA V pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 1N4148M Forward characteristics Dynamic forward resistance versus forward current 1N 4148M 1N 4148M 10 4 5 2 Tj=25 oC f=1KHz 10 3 10 2 iF 10 o Tj=100 C o Tj=25 C 10 3 rf 5 2 10 2 1 5 2 10 -1 10 5 2 10 -2 0 1 VF 2V 1 10 -2 10 -1 1 10 IF 10 2 mA Admissible power dissipation versus ambient temperature Valid provided that electr……
