器件名称:
1N4151W
功能描述:
Silicon Epitaxial Planar Small Signal Diode
文件大小:
323.3KB 共4页
简 介:
1N4151W Silicon Epitaxial Planar Small Signal Diode Features SOD 123 package Fast switching Absolute Maximum Ratings (Ta=25℃) Parameter Peak reverse voltage Reverse voltage Average rectified current half wave Rectification with resistive load f≧50Hz Surge forward current t<1s Tj=25℃ Power dissipation Thermal resistance junction to ambient air Junction temperature Storage temperature Symbol VRM VR IO IFSM Ptot RthJA TJ Tstg Limits 75 50 150* 500 410* 450* 150 -65 to +150 Unit V V mA mA mW ℃/W ℃ ℃ * Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics (Ta=25℃) Parameter Forward voltage Leakage current Reverse breakdown voltage Capacitance Reverse recovery time Rectification efficiency Symbol Min Typ Max 1.0 VF IR 50 50 V(BR)R 75 2 Ctot trr 4.0 2.0 ηv 0.45 Unit Conditons V IF=50mA nA VR=50V A VR=20V, TJ=150℃ V pF ns ns Tested with 5A pulses VF=VR=0V From IF=10mA through IR=10mA to IR=1mA From IF=10mA to IR=1mA, VR=6V, RL=100 f=100MHz, VRF=2V SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/05/2005 1N4151W Forward characteristics Dynamic forward resistance Versus forward current Admissible power dissipation Versus ambient temperature For conditions, see footnote in table “Absolute Maximum Ratings” Relative capacitance versus reverse voltage SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a……
