器件名称:
1N4449
功能描述:
HIGH SPEED SWITCHING DIODE
文件大小:
38.27KB 共2页
简 介:
1N4449 FEATURES : High switching speed: max. 4 ns Reverse voltage:max. 75V Peak reverse voltage:max. 100 V Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 0.020 (0.52)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics ( Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Forward DC Current Maximum Average Forward Current Maximum Surge Forward Current at tp = 1 s Power Dissipation Maximum Junction Temperature Storage Temperature Range Symbol VRM VR IF IF(AV) IFSM PD TJ TSTG Value 100 75 200 150 2 500 200 -65 to + 200 Unit V V mA mA A mW °C °C Electrical Characteristics Parameter Reverse Current Forward Voltage ( Ta = 25 °C) Symbol IR Test Condition VR = 20 V VR = 20 V , Tj = 150 °C IF = 5 mA IF = 30 mA IR = 100 μA (pulsed) f = 1MHz ; VR = 0 IF = 10 mA ,V R = 6 V, RL = 100 Ω Min. 0.63 100 - Typ. - Max. 25 50 0.73 1.0 2 4 Unit nA μA V V pF ns VF V(BR)R Cd Trr Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time Page 1 of 2 Rev. 01 : May 9, 2006 RATING AND CHARACTERISTIC CURVES ( 1N4449 ) FIG1. - FORWARD CURRENT VS. FORWARD VOLTAGE 1000 FIG.2 - REVERSE CURRENT VS. JUNCTION TEMPERATURE 10000 TJ = 100 °C FORWARD CURRENT, I F (mA) 100 REVERSE CURRENT, IR (nA) 1000 TJ = 125 10 100 TJ = 25 °C TJ = 25 °C 1……
