器件名称:
1N5226B
功能描述:
SILICON PLANAR ZENER DIODES
文件大小:
65.03KB 共3页
简 介:
CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N5221B THRU 1N5272B SILICON PLANAR ZENER DIODES FEATURES Voltage Range: 2.7V to 110V Double siug type construction DO-41 1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7) DIA. DIA. MECHANICAL DATA Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD- 202E, Method 208 guaranteed Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.33 grams .107(2.7) .080(2.0) 1.0(25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. Absolute Maximum Ratings (Ta=25°C) SYMBOL VALUE 0.51) 150 units W °C Zener Current see Table “Characterstics” Power Dissipation at Tamb=25°C Junction Temperature 1) Ptot TJ Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature. Characteristics at Tamb=25°C SYMBOL Min. -- Typ. -- Max. 1.2 units V Forward Voltage at IF=250mA VF Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature. １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn CHONGQING PINGYANG ELECTRONICS CO.,LTD. SILICON PLANAR POWER ZENER DIODES Zener Voltage range1) TYPE Vznom4) V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 Dynamic recsista……
