器件名称:
CHA3023-99F
功能描述:
1-18 GHz WIDE BAND AMPLIFIER
文件大小:
389.63KB 共8页
简 介:
CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25m gate length, via holes through the substrate and air bridges and it is available in die form. 15 10 Gain & RLoss 5 0 -5 -10 -15 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) dBS11 dBS22 dBS21 Main Features ■ Broadband performances : 1-18 GHz ■ 14dB gain ■ 3dB typical Low Noise Figure ■ ±0.7 dB gain flatness ■ Die size : 2.15 X 1.42 X 0.10 mm On wafer measurements Main Characteristics Tamb. = 25° C Symbol Fop G NF Id Parameter Operating frequency range Small signal Gain Noise figure Bias current 95 Min 1 12.5 14 4 dB mA Typ Max 18 Unit GHz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! DSCHA30235263 - 20 sep 05 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3023 1-18GHz Wide Band Amplifier Electrical Characteristics for Broadband Operation Tamb = +25° C, Vd=5V, Vg1=-0.3V tuned to have Id=95mA Vg2=+2V Symbol Fop G Parameter Operating frequency range Small signal gain F= 1 to 3GHz F= 3 to 18GHz Small signal gain flatness Output power at 1dB gain compression Input VSWR Min 1 11.5 12.5 Typ Max 18 U……
