器件名称:
1N5392G
功能描述:
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
文件大小:
39.56KB 共1页
简 介:
CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N5391G THRU 1N5399G TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE：50-1000V CURRENT：1.5A FEATURES High reliability Low leakage Low forward voltage drop High current capability DO-15 1.0(25.4) MIN. .300(7.6) .230(5.8) .034(0.9) .028(0.7) DIA. MECHANICAL DATA Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD- 202E, Method 208 guaranteed Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.38 grams .140(3.6) .104(2.6) 1.0(25.4) MIN. DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N5391G 1N5392G 1N5393G1N5395G1N5397G 1N5398G1N5399G units Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TL=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.5A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C VRRM VRMS VDC Io IFSM VF 50 35 50 100 70 100 200 140 200 400 280 400 1.5 50 1.1 5.0 500 30 20 50 600 420 600 800 560 800 1000 700 1000 V V V A A V @ TA=100°C IR Maximum Full Load Reverse Current Average, Full Cycle .375”(9.5mm) lead length at TL=75°C CJ Typical Junction Capacita……
