器件名称:
1N5817W
功能描述:
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
文件大小:
241.91KB 共3页
简 介:
1N5817W 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application. 1 PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 A0 Top View Marking Code: "A0" Simplified outline SOD-123 and symbol Mechanical Data: Case: SOD-123, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Absolute Maximum Ratings (Ta = 25oC) Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage at IR=1.0mA DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current at TL=90℃ Power Dissipation Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical Thermal Resistance Junction to Ambient Operating Temperature Range Storage Temperature Range VRRM VRWM VR VR(RMS) IO Ptot IFSM RθJA Tj TS Value 20 20 20 14 1.0 450 25 222 -65 to +125 -65 to +150 Unit V V V V A mW A ℃/W ℃ ℃ SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 24/11/2004 1N5817W Characteristics at Tamb = 25℃ Symbol at IF = 0.1A Forward Voltage (Note 1) at IF = 1.0A at IF = 3.0A at IR=1.0mA Reverse Breakdown Voltage Reverse Leakage at VR=20V Current (No……
