器件名称:
1N5818WB
功能描述:
1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE
文件大小:
135.91KB 共2页
简 介:
1N5817WB-1N5819WB 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range 1N5817WB 1N5818WB 1N5819WB Symbol VR IO IFSM Ptot Tj TS Value 20 30 40 1 25 450 - 55 to + 150 - 55 to + 150 Unit V A A mW O C C O Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA 1N5817WB 1N5818WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB 1N5819WB 1N5819WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB CD Symbol VBR Min. 20 30 40 Max. 1 1 1 0.05 0.075 0.45 0.45 0.55 0.6 0.75 0.875 0.9 120 pF Unit V Reverse Voltage Leakage Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.1 A at IF = 1 A IR mA VF V at IF = 3 A Diode Capacitance at VR = 4 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/12/2006 1N5817WB-1N5819WB PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 ∠ ALL ROUND c HE D A E bp A UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.127 D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 v 0.2 ∠ 5 O SEMTECH ……
