器件名称:
1N6008B
功能描述:
SILICON PLANAR ZENER DIODES
文件大小:
178.02KB 共1页
简 介:
1N6008B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings (Ta = 25 OC) Symbol Power Dissipation Junction Temperature Storage Temperature Range 1) Value 500 1) Unit mW O Ptot Tj TS 175 -55 to +175 C C O Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case Characteristics at Tamb = 25 OC Symbol Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 200mA 1) Min. - Max. 0.31) 1.2 Unit K/mW V RthA VF Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case Characteristics at Tamb = 25 OC Zener Voltage Range1) Type 1N6008B 1) 2) Dynamic Resistance rZJT <55 rZJK at IZK mA <600 0.25 Leakage Current IR at VR A V <100 17 Vznom V 22 lZT for VZT2) mA V 5 20.9...23.1 Maximum DC Zener Current IZM mA 23 Tested with pulses tp = 20 ms. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 04/11/2005 ……
