EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询
器件查询:
400万器件资料库等您来搜!
首页>SEMTECH_ELEC> 1N914WS

1N914WS

器件名称: 1N914WS
功能描述: Surface Mount Switching Diode
文件大小: 293.52KB 共3页
生产厂商: SEMTECH_ELEC
下  载: 在线浏览点击下载
简  介: 1N914WS Surface Mount Switching Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range at t = 1 s at t = 1 μs Symbol VRRM IF(AV) IFSM Ptot RθJA Tj Tstg Value 100 200 0.5 1 200 625 150 - 55 to + 150 Unit V mA A mW O C/W O C C O Electrical Characteristics (Ta = 25 OC) Parameter Forward Voltage at IF = 10 mA Reverse Breakdown Voltage at IR = 5 A at IR = 100 A Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, TJ = 150 OC Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA, RL = 100 , IRR = 3 mA Symbol VF V(BR)R V(BR)R IR Min. 75 100 Max. 1 25 5 50 4 50 Unit V V V nA A A pF ns Ctot trr SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/04/2009 1N914WS Forward characteristics 10 3 Leakage current vs. junction temperature 10 5 4 10 2 2 103 5 I F ( m A) Tj=25 C I R (nA) 10 1 10-2 10-1 0 Tj=100 C 2 102 5 2 10 5 2 VR=20V 0 100 Tj ( C) 200 1 2 VF (V) 1 Reverse capacitance vs. reverse voltage Tj=25 C f=1MHz Dynamic forward resistance vs. forward current 10 4 5 2 3 5 2 2 5 2 1.1 Tj=25 C f=1kHz 1.0 1……
相关电子器件
器件名 功能描述 生产厂商
1N914WS Surface Mount Switching Diode SEMTECH_ELEC
1N914WS SILICON EPITAXIAL SWITCHING DIODE CDIL
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2