器件名称:
1SS196
功能描述:
SILICON EPITAXIAL PLANAR DIODE
文件大小:
135.27KB 共2页
简 介:
1SS196 SILICON EPITAXIAL PLANAR DIODE Features Small package Low forward voltage Fast reverse recovery time Small total capacitance 3 1 2 Marking Code: FD SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot Tj Ts Value 85 80 100 300 2 150 150 - 55 to + 150 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 mA Symbol VF IR CT trr Max. 1.2 0.5 3 4 Unit V A pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/01/2008 1SS196 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/01/2008 ……
