器件名称:
1SS352
功能描述:
SILICON EPITAXIAL PLANAR DIODE
文件大小:
257.26KB 共3页
简 介:
1SS352 SILICON EPITAXIAL PLANAR DIODE Features Low forward voltage Fast Reverse Recovery Time Small Total Capacitance PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 W2 Application Ultra high speed switching Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot Tj Tstg Value 85 80 100 200 1 200 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at f = 1 MHz Reverse Recovery Time at IF = 10 mA Symbol VF Max. 1.2 Unit V IR 0.1 0.5 3 4 A CT trr pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/04/2009 1SS352 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/04/2009 1SS352 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limite……
