器件名称:
1SS401
功能描述:
High Speed Switching Applications
文件大小:
173.49KB 共3页
简 介:
1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications Unit in mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.38 V (typ.) : IR = 50μA (max) : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Operating temperature range Symbol VRM VR IFM IO P Tj Tstg Topr Rating 25 20 700 300 100 125 55~125 40~100 Unit V V mA mA mW °C °C °C ― JEDEC SC-70 JEITA 1-2P1D TOSHIBA Weigh: 0.006 g(typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance IR CT Test Circuit ― ― ― ― ― Test Condition IF = 1mA IF = 10mA IF = 300mA VR = 20V VR = 0, f = 1MHz Min ― ―……