器件名称:
1SS404
功能描述:
Silicon Epitaxial Schottky Barrier Type
文件大小:
120.54KB 共3页
简 介:
1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications Two-pin small packages are suitable for higher mounting densities Low forward voltage : VF (3) = 0.38 V (typ.) Low reverse current: IR = 50 μA (max) Small total capacitance: CT = 46 pF (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Operating temperature range Symbol VRM VR IFM IO P Tj Tstg Topr Rating 25 20 700 300 200 (Note 1) 125 55 ~ 125 40 ~ 100 Unit V V mA mA mW °C °C °C USC JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 1-1E1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.004 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy board of 20 mm × 20 mm, pad dimension 4 mm × 4 mm. Note: Marking Equivalent Circuit (top view) S5 Electrical Characteristics (Ta = 25……
