器件名称:
1SS83
功能描述:
Silicon Epitaxial Planar Diode for High Voltage Switching
文件大小:
27.02KB 共6页
简 介:
1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-150A (Z) Rev. 1 Jul. 1995 Features High reverse voltage. (VR = 250V) High reliability with glass seal. Ordering Information Type No. 1SS83 Cathode band Verdure 2nd band Light Blue 3rd band Light Blue Package Code DO-35 Outline 1 3rd band 2nd band Cathode band 2 1. Cathode 2. Anode 1SS83 Absolute Maximum Ratings* 2 (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM* VR I FM I FSM * IO Pd Tj Tstg 2 1 Value 300 250 625 1 200 400 175 –65 to +175 Unit V V mA A mA mW °C °C Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min — — — — — Typ — — — 1.5 — Max 1.0 0.2 100 — 100 pF ns Unit V A Test Condition I F = 100mA VR = 250V VR = 300V VR = 0V, f = 1MHz I F = IR = 30mA, Irr = 3mA, R L = 100 2 1SS83 10 –1 Forward current I F (A) 10 –3 10 –4 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) Ta = 12 Ta = 5°C 75° C Ta = 25°C Ta = –25° C 10 –2 1.2 Fig.1 Forward current Vs. Forward voltage –5 10 Ta = 75°C Reverse current I R (A) 10 –6 Ta = 50°C 10 –7 Ta = 25°C 10 –8 10 –9 0 50 150 200 250 100 Reverse voltag……
