器件名称:
2N3054A
功能描述:
Silicon NPN Power Transistors
文件大小:
137.04KB 共4页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A DESCRIPTION With TO-66 package APPLICATIONS Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Power dissipation Junction temperature Storage temperature 2N3054 2N3054A TC=25 Open emitter Open base Open collector CONDITIONS VALUE 90 55 7 4 2 25 75 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER 2N3054 Thermal resistance junction to case 2N3054A 2.33 MAX 7.0 /W UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=0.5A ;IB=50mA IC=3A; IB=1A IC=0.5A ; VCE=4V VCE=90V;VBE(off)=1.5V TC=150 VCE=30V; IB=0 VEB=7V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V IC=0.2A ; VCE=10V;f=1MHz 2N3054 2N3054A SYMBOL VCEO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO hFE-1 hFE-2 fT MIN 55 TYP. MAX UNIT V 1……
