器件名称:
2N3233
功能描述:
Silicon NPN Power Transistors
文件大小:
129.7KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3233 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio amplifier and power switching PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 110 100 7 7.5 115 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N3233 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V VCE(sat) VBE(on) ICEO Collector-emitter saturation voltage IC=5A; IB=0.5A IC=3A ; VCE=4V 1.0 V Base-emitter on voltage 1.5 V Collector cut-off current VCE=50V; IB=0 0.7 mA ICBO Collector cut-off current VCB=110V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=10V 18 55 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3233 Fig.2 outl……