器件名称:
2N3235
功能描述:
Silicon NPN Power Transistors
文件大小:
130.07KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3235 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS Designed for general–purpose switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 65 55 7 15 7 115 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N3235 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 55 V VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO Collector-emitter saturation voltage IC=4A ;IB=0.4A IC=10A ;IB=3.3A 1.1 V Collector-emitter saturation voltage 3.0 V Base-emitter on voltage IC=5A ; VCE=5V 1.5 V Collector cut-off current VCE=30V; IB=0 0.7 mA ICBO Collector cut-off current VCB=65V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 hFE-2 DC current gain IC=5A ; VCE=5……
