器件名称:
2N3237
功能描述:
Silicon NPN Power Transistors
文件大小:
130.07KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3237 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 90 90 5 20 7.5 200 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=0.2A ;IB=0 IC=10A; IB=1.0A IC=20A ;IB=4.0A IC=10A ; VCE=4V VCE=45V; IB=0 VCB=90V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=10A ; VCE=4V IC=20A ; VCE=4V 40 15 5 MIN 90 TYP. 2N3237 MAX UNIT V 1.4……
