器件名称:
2N3445
功能描述:
Silicon NPN Power Transistors
文件大小:
107.62KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 7 7.5 115 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N3445 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 80 V VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO Collector-emitter saturation voltage IC=3A; IB=0.3A 1.2 V Collector-emitter saturation voltage IC=7A;IB=1.5A 3.0 V Base-emitter on voltage IC=3A ; VCE=5V 1.5 V Collector cut-off current VCE=60V; IB=0 0.7 mA ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=3A ; VCE=5V 20 60 hFE-2 DC current gain IC=7A ; VCE=5V 4 2 SavantIC Semicondu……
