器件名称:
2N3585
功能描述:
Silicon NPN Power Transistors
文件大小:
154.13KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25℃ VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 300 6 2 5 1 35 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICEX ICEO IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=0.2A ; IB=0 IC=1A; IB=0.……
