器件名称:
2N5428
功能描述:
Silicon NPN Power Transistors
文件大小:
147.09KB 共4页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5428 2N5430 DESCRIPTION With TO-66 package Low collector saturation voltage : VCE(sat)=1.2V(Max)@IC=7A Excellent safe operating areas APPLICATIONS Designed for switching and wide-band amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N5428 2N5430 Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 2N5428 2N5430 Open collector Open base CONDITIONS Open emitter VALUE 80 100 80 100 6 7 1 40 200 -65~200 V A A W V UNIT V VCEO VEBO IC IB PD Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 4.37 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5428 IC=50mA ; IB=0 2N5430 IC=2A ;IB=0.2A IC=7A I;B=0.7A IC=2A ;IB=0.2A IC=7A I;B=0.7A VCE=75V;VBE(off)=1.5V TC=150 VCE=90V;VBE(off)=1.5V TC=150 VCB=Rated VCBO;IE=0 VEB=6V; IC=0 IC=0.5A ; VCE=2V IC=2A ; VCE=2V IC=5A ; VCE=2V IC=0.5A ; VCE=10V;f=10MHz CONDITIONS SYMBOL 2N5428 2N5430 MIN 80 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 100 0.7 1.2 1.2 2.0 0.1 1.0 0.1 1.0 0.1 0.1 60 60 40 20 MHz 240 V V V V VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2……
