器件名称:
2N5490
功能描述:
Silicon NPN Power Transistors
文件大小:
125.56KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION ·With TO-220 package ·High power dissipation APPLICATIONS ·For used in medium power and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL 固 体 导 电半 PARAMETER 2N5490/5494 2N5492 VCBO Collector-base voltage VCEO Collector-emitter voltage A H C IN NG S 2N5496 2N5492 2N5496 D N O C I M E Open emitter Open base Open collector CONDITIONS R O T UC VALUE 60 75 90 40 55 70 5 7 3 UNIT V 2N5490/5494 V VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature V A A W ℃ ℃ TC=25℃ 50 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5490/5494 VCEO(SUS) Collector-emitter sustioning voltage 2N5492 2N5496 2N5490 Collector-emitter saturation voltage 2N5492 2N5494 2N5496 2N5490 2N5492 VBE Base-emitter on voltage 2N5490 2N5492 2N5494 2N5496 CONDITIONS MIN 40 TYP. MAX UNIT IC=0.1A ;IB=0 55 70 V IC=2.0A;IB=0.2A IC=2.5A;IB=0.25A 1.0 IC=3.0A;IB=0.3A IC=3.5A;IB=0.35A IC=2.0A ; VCE=4V IC=2.5A ; VCE=4V IC=3.0A ; VCE=4V IC=3.5A ; VCE=4V 1.1 1.3 V 1.5 V VCEsat 固 ICEV ICER……
